AJA international-built ATC 2000V sputtering system has three planar magnetron guns. Two of the sputter guns are 3 inches wide and another a two-inch gun. These sputtering guns can be titled to maintain control on the thickness of the film deposited at different sample heights. The sputter guns are enclosed in a chimney configuration minimizing cross-contamination between sources. This system has a 1000W DC power supply and a 600W RF power supply, both can be simultaneously used to co-deposition. This system has a load-lock for fast substrate transfer and the main chamber is always at a low base pressure of 5 x 10-8 Torr. This system has two mass flow controllers, one for argon and the other can be configured for reactive sputtering with O2 or N2 to deposit oxides or nitrides. An adaptive pressure control valve(VAT) is used to control the process pressure independent of the gas flow. The system can accommodate 8-inch wafers and the substrate can be heated to 700oC. The process parameters in this system are computer-controlled for reproducible thin film thickness and properties.
Sputter targets available : Ti, Cr, Au, Ag, Al, C, Mo, Pt, Si, Ta, ITO, TiO2.
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