Atomic Layer Deposition

Cambridge Savannah ALD System is equipped with high-speed pneumatic pulse valves to deposit a conformal and uniform thin film on Ultra High Aspect Ratio substrates. Substrates up to 200mm can be mounted and the temperature of the deposition can be varied from 100 oC to 350 oC. An Ozone generator is also mounted to the system.

 Currently, the system is configured to deposit Al2O3 using trimethylaluminum and water or ozone. The system can be configured to deposit TiO2 thin film.

Contact administrator for more details.