Atomic layer deposition (ALD) is a gas-phase technique that deposits thin films onto a substrate one molecular layer at a time. Unlike many other deposition techniques, such as sputtering or evaporation, ALD can conformally coat substrates with high aspect ratio features. The Cambridge Savannah ALD System can accommodate substrates up to 200mm in diameter. The deposition temperature can be varied from 100 oC to 350 oC. An Ozone generator is available to assist the deposition process. Currently, the system is configured to deposit Al2O3 using a trimethylaluminum precursor and water or ozone. The system can also be configured to deposit TiO2 thin film. The typical deposition thickness of ALD is less than 50 nm.
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